https://pubs.acs.org/doi/10.1021/acsnano.5c06174

An ion-gel/graphene electric double layer (EDL) transistor-based ion-gating reservoir (IGR) demonstrated an exceptionally broad responsive range, from 1 MHz to 20 Hz, while maintaining a high information processing capacity and adaptability across multiple time scales.

Principal component analysis revealed that the IGR’s superior performance stems from its high-dimensionality, driven by the ultrawideband responses of the EDL along with the ambipolar behavior of graphene. The proposed IGR represents a significant step forward in providing low-power, high-performance computing solutions, particularly for resource-constrained edge environments.